Abstract
Numerical simulation has been performed to investigate the GaN/InxGa1-xN heterojunction p-i-n solar cell. The role of indium composition in the absorber and the presence of polarisation charges have been studied thoroughly. ILF has been proposed at the heterointerface of p-GaN/i-InxGa1-xN which proved to be beneficial in overcoming the undesirable effects of charge transport across heterojunction by reducing SRH recombination, especially prevalent at high indium compositions. The simulations were conducted at low and high indium compositions and the photovoltaic properties were examined using Solis-1D Semiconductor Device Simulator.
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