Numerical simulation of CuInSe2 solar cells using wxAMPS software

Abstract

CuInSe2 (CISe) based solar cells have shown great potential of research and development among chalcopyrite I-III-VI2 based solar cells. In this paper, CISe-based solar cells are simulated using wxAMPS software in order to understand effect of various factors on solar cell performances. The parameters, such as thicknesses and carrier densities of absorber layer (CISe) and barrier layer (CdS), and defect densities of CISe layer, have been numerical simulated to obtain prefer performances of CISe solar cells, which all play appropriate roles. The relationship between work temperature and CISe solar cell performances also is studied. Simulation results show that optimal thicknesses of CISe layer and CdS layer are about 2 μm and 0.05 μm, respectively, while large carrier density and few defects in CISe layer deeply contribute to improve solar cell performances. In this paper, optimal photo-electric conversion efficiency (η) of 14 % has been obtained with open-circuit voltage (Voc) of 0.57 V, short-circuit current density (Jsc) of 33.6 mA/cm2 and fill factor (FF) of 0.73, using structure parameters of 0.3 μm Al-ZnO, 0.05 μm i-ZnO, 0.05 μm CdS and 2 μm CuInSe2 with optimal Na of CISe (5E16 cm−3) and Nd of CdS (1E15 cm−3). As a result, these numerical simulation results would be used to guide the preparation of high efficiency solar cells.