Abstract
Copper telluride (Cu2Te) is an attractive semiconductor absorber material for thin film solar cells due to its excellent opto-electronic properties. However, the maximum experimental conversion efficiency of the Cu2Te thin film solar cell remains at about 6%. In the present study, the cuprous oxide (Cu2O) material as the hole transport layer (HTL) has been proposed in the Cu2Te based thin film solar cell. The purpose of this work is to enhance the device performance by inserting widely available Cu2O material as HTL into the basic heterojunction structure. The effects of several material parameters such as thickness, carrier concentration, defect density and back contact metal work function on the device performance of the proposed Cu2Te thin film solar cell consisting of FTO/WS2/Cu2Te/Cu2O/metal have been studied and numerical investigated using the wxAMPS program. Optimized conversion efficiency of the proposed Cu2Te thin film solar cell with Au as back contact metal has been obtained to be 30.32%. These results reveal that the Cu2O material as HTL can be employed to fabricate low cost and highly efficient Cu2Te thin film solar cells.
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