Abstract
Through silicon via (TSV) technology is crucial for modern semiconductor device package, enabling high-performance integrated microsystems. This paper investigates the mechanism of the bottom-up copper deposition process in TSV, leveraging a co-adsorbed polyether-Cl-suppression layer and accelerators for optimized filling profiles. We present numerical simulations of the effects of additives (accelerator, suppressor) and chloride ions (Cl−) on the TSV filling. By varying the substance concentration, we obtain three distinct filling models, including filling with voids, conformal filling and bottom-up filling. We analyzed the distribution of various substances and current densities to elucidate the filling mechanism. Furthermore, TSV filling experiments were conducted, and the simulated profiles were in good match with the filling experiments. It is verified that the feasibility of the proposed numerical model by generalizing to 90μm × 180 μm, 50μm × 100 μm, and 10μm × 100 μm via holes of different sizes and aspect ratios.
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