Abstract
The charge collection transient following the strike of a silicon diode junction by an ionizing particle is computed in two and three dimensions for related device structures. The results of the computations are compared, and new physical interpretations of the results are discussed. The results indicate that although two and three dimensional simulations yield qualitatively similar behavior, accurate determination of the magnitude and duration of the current pulse and charge collection require three dimensional simulation. The present study also shows that, even for the simple structure considered, the device structure exerts an influence on the spreading of the disturbance, and this spreading is not, in general, axisymmetric.
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