Abstract
This paper presents an analysis of a silicon-on-insulator (SOI) waveguide structure to be used for phase modulation at 1.3 /spl mu/m. The device consists of a two-dimensional (2-D) strip waveguide and a p/sup +//N/sup -//N/sup +/ lateral diode to realize the effective index modulation by free-carrier injection. We have calculated that an effective index modulation between 5/spl middot/10/sup -4/ and 10/sup -3/ could be obtained with current densities in the range from 500 to 1600 A/cm/sup 2/. A detailed numerical simulation of the device transient response is also reported. We demonstrate that an effective index modulation of 5/spl middot/10/sup -4/ could be obtained with a cutoff frequency of about 100 MHz. The phase modulator has a predicted figure-of-merit (FoM) of 160/spl deg//V/mm and a chirp factor of 25. Due to its full compatibility with complementary metal-oxide-semiconductor (CMOS)-SOI technology, the device is interesting for low-cost silicon-based optoelectronic systems.
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