Abstract
The P+ a-SiC:H/N+ poly-Si solar cell is simulated by an AMPS-1D device simulator to characterize the new thin film polycrystalline-silicon solar cell. In order to analyze the characteristics of the device, the thickness, working temperature, and impurity concentration for the N+ polysilicon layer are considered. The results show that the performance of the cells shows little change when the thickness of N+ polysilicon varies from 10 to 30 μm. It is concluded that the P+ a-SiC:H/N+ poly-Si solar cell has the highest performance with high open circuit voltages (Voc) of 1.31 V, high conversion efficiency of 17.363% and high fill factor of 0.884. Therefore, the P+ a-SiC:H/N+ poly-Si solar cell has promising future applications.
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