Abstract
SiC crystal is an excellent substrate material for high power electronic devices and high-frequency electronic devices. Being cost-effective and defect-free are the two biggest challenges at present. For the physical vapor transport (PVT) growth of a SiC single crystal, SiC powder is used as the source material, which determines the cost and the quality of the crystal. In this paper, we propose a new design in which graphite blocks are substituted for the non-sublimated SiC powder. Temperature distribution in the SiC powder, the evolution of the SiC powder, and the vapor transport are investigated by using finite element calculations. With the addition of graphite blocks, the utilization and sublimation rate of SiC powder is higher. In addition, the reverse vapor transport above the SiC powder is eliminated. This design provides a new idea to reduce the cost of SiC crystals in industrialization.
Highlights
The highest temperature area was at the bottom corner of the graphite crucible, and the lowest temperature area was at the top surface of the SiC powder
The simulation results of the traditional structure showed that the temperature difference of the powder was large
We found the utilization rate of the powder was very low in the traditional structure
Summary
Physical vapor transport (PVT) is the main method for growing a large-size SiC single crystal, which needs to be cost-effective and defect-free
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