Abstract

A hydrodynamic subband model for semiconductors has been formulated in (Mascali and Romano, IL NUOVO CIMENTO 33C:155163, 2010) by closing the moment system derived from the Schrodinger-Poisson-Boltzmann equations on the basis of the maximum entropy principle (MEP). Explicit closure relations for the fluxes and the production terms are obtained taking into account scattering of electrons with acoustic and non-polar optical phonons, as well as surface scattering. Here a suitable numerical scheme is presented for the above model together with simulations of a nanoscale silicon diode.

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