Numerical Simulation for Gas Flow and Mass Transfer in a Dry Etching Chamber

Abstract

Numerical simulations of gas flow and mass transfer in a dry etching chamber are carried out. The gas flow in the chamber is treated as an axisymmetric laminar flow with a buoyancy effect. After the flow calculation, the concentration distributions of the radicals and the sources gas molecules in the plasma are calculated by solving continuity equations for each component. Then, the etching rate is calculated and is compared with the experimental result. The calculations and the experiments show good agreement.