Abstract
Perovskite-based solar cells with planar configuration have been perceived as an alternative and attractive option for photovoltaic technology due to high power conversion efficiency (PCE). The performance of heterojunction-based devices is hindered by the recombination in the perovskite layers. The homojunction is suitable for further improvement in PCE due to the built-in electric field, which will enhance the transport of photogenerated charge carriers, therefore, reducing recombination losses. A detailed analysis of the homojunction-based device is needed for further improvement in PCE. In this study, the planar homojunction perovskite photovoltaic device has been simulated by solar cell capacitance simulator (SCAPS). Simulation analysis shows the dependence of PCE on the thickness and defects of the perovskite layer. Recombination analysis at the different junctions has been simulated using hypothetical interface layers at the respective junctions. It has been revealed that the interface defects influence the device performance. The proposed MAPbI <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> homojunction-based devices have achieved more than 23% PCE, which is significantly higher than the existing planar heterojunction-based devices.
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