Numerical simulation approach to investigate the effect of gas tube design on the impurities distribution and thermal properties of multi-crystalline silicon ingot grown by directional solidification process

Abstract

Multi-crystalline Silicon (mc-Si) grown by directional solidification (DS) system is considered as a crucial photovoltaic material due to its relatively low cost and high yield. The numerical modelling is very useful for understanding the impurities segregation during mc-Si growth process. In the present paper, numerical simulation is carried out to investigate the impact of Argon gas tube design as shower head. In this Argon gas tube modification act on the non-metallic impurities, melt-crystal interface, temperature distribution and stress levels in the silicon ingot during the different stages of solidification process. The proposed design resulted in remarkable reduction in the back transfer of CO from heater component of the DS furnace. The generated von misses stress is also discussed as the function of different stage of solidification. The results concluded that the stress level at the initial stage of solidification is lower but it is large at above 75 % solidification rate. Also, we found that the modified gas tube design gives better temperature distribution with melt-crystal interface (m-c) shape. The modified argon tube design will be helpful for enhancing the quality of silicon ingot by controlling the chemical reaction between silicon melt and impurity transport.