Abstract
High light absorption material BaSi2 based heterojunction and homojunctin solar cells were simulated with the program AMPS (analysis of microelectronic and photonic structures)-1D in order to thoroughly understand the mechanism for further improvement in conversion efficiency. Simulation results demonstrated that p+-Si/n-BaSi2 heterojunction solar cells exhibited superior photoelectric performances as compared with n+-Si/p-BaSi2 solar cells. A high conversion efficiency up to of 22.7% were achieved by p+-Si (100 nm, NA = 5 × 1019 cm−3)/n-BaSi2 (2000 nm, ND = 1 × 1018 cm−3) heterojunction solar cell. For BaSi2/BaSi2 homojunction solar cells, the window layer should be designed as thin with large scale uniformity and high quality in achieving high efficiency. Both n+-BaSi2 (5 nm, ND = 5 × 1019 cm−3)/p-BaSi2 (2000 nm, NA = 1 × 1017 cm−3) homojunction and p+-BaSi2 (5 nm, NA = 5 × 1019 cm−3)/n-BaSi2 (2000 nm, ND = 1 × 1017 cm−3) homojunction solar cells gave out a high conversion efficiency of 22.5%. Both donor-like defects in p-BaSi2 and acceptor like defects in n-BaSi2 light absorption layers were identified to significantly influence the solar cell performance that all parameters deteriorated severely under high bulk defect density. Moreover, p+-Si/n-BaSi2 solar cell was more sensitive to high level interface trap defects on account of the sharp dropping down of Eff under high interface trap density over 5 × 1012 cm−2. This work provided insight essential guidance for device design and optimization in achieving high efficiency silicide solar cell with low cost.
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