Abstract
Dark and illuminated current–voltage(J–V) characteristics of the hydrogenated amorphous silicon (a-Si:H) p–i–n diode havebeen simulated by solving numerically the full set of transport equations. Thedependence of the dark current on the intrinsic layer (i-layer) thickness and on themeasurement temperature is investigated by taking into account the presence of thep/i interface defect states. Good agreement with experimental data is obtained when thep/i interface defect density is increased with increasing i-layerthickness. Further, no appreciable influence was remarked for thei/n interfacestates on the J–V characteristic, which is in agreement with experimental observations. The numerical simulationalso concerned the evaluation of the diode photo-parameters, i.e. the short-circuit current density(Jsc) and theopen-circuit voltage (Voc), and reproduced, in a good manner, the light intensity dependence ofJsc and Voc for different i-layer thicknesses.
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