Abstract
The physical mechanism of subpicosecond electrical pulse generated by nonuniform illumination of transmission-line gaps is studied in detail using a two-dimensional numerical model. This model agrees very well with existing theories as well as experimental observations and further explains the observed highly nonuniform field distributions, which have been neglected in previous theories. The pulse dependence on light intensity, bias voltage, substrate doping, and beam size and location are studied and discussed. It also confirms that this mechanism should be observable in silicon.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
