Abstract
The electrical and photoelectrical properties of long wavelength n̲+pp̲+ Hg1−xCdxTe structures have been optimized by using an exact numerical analysis. In this analysis we have been taking into account the degeneracy, non-parabolicty, deviation from thermodynamical equilibrium and graded interfaces. The band diagram, electrical field, carrier mobility, photoelectrical gain, responsivity, noise and detectivity have been calculated and optimized as a function of different variable such as alloy composition, doping concentration, thickness, and applied voltage to obtain optimized performance at room temperature. This numerical simulation can be used to optimize the mentioned parameters for other structures such as n̲+np̲+, n̲+p operating in photodiode, or photovoltaic mode.
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