Abstract
The trap-assisted tunnelling theory was developed to describe the tunnelling of charge carriers via bandgap energy levels in structures based on hydrogenated amorphous silicon and microcrystalline silicon. Its implementation into ASPIN numerical simulator is explained. Models that were verified on n/p single junctions were applied in the tunnel recombination junction area of a tandem solar cell. Thus, it is possible to study a multi-layer solar cell without separately simulating any of its components.
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