Abstract
A one-dimensional mathematical model is presented which accounts for discontinuous absorption of heat at the crystal/melt interface (Peltier effect) associated with the formation of electric current induced growth layers during Czochralski pulling. The energy transport equations are solved using an explicit finite difference technique. Simulations were performed using crystal growth and heat transfer parameters which reflect actual experimental conditions encountered during growth of doped InSb. Assumptions made in order to calculate the Peltier coefficient from the dimensions of contiguous current induced growth layers are verified in simulation. The results are found to be in excellent agreement with the experiment.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
