Numerical modelling and analysis of earth abundant Sb2S3 and Sb2Se3 based solar cells using SCAPS-1D

Abstract

Antimony chalcogenides, Sb 2 S 3 and Sb 2 Se 3 , are the promising candidates for next generation solar cells due to its non-toxicity, earth abundance, low cost and easy availability. In this work, Sb 2 S 3 and Sb 2 Se 3 hetero-junction solar cells are modeled, numerically analyzed and compared by the SCAPS (Solar Cell Capacitance Simulator) software. Initial simulation for configuration optimization was done in detail for absorber layer thickness, buffer layer thickness, acceptor density, radiative recombination coefficient, series-shunt resistance, defect density and the work function of the back contact. A detailed analysis of the junction characteristics like carrier generation and recombination, built-in electric field and capacitance-voltage (C-V) study was also done in the second stage to determine the carrier lifetime, depletion width, built-in potential and doping density. The present study shows that, the optimum thickness for Sb 2 S 3 absorber layer is 2.5 μm and for Sb 2 Se 3 absorber layer is 2 μm to achieve the best efficiency. The buffer layer optimum thickness for Sb 2 S 3 and Sb 2 Se 3 solar cell is in the range of 50 nm to 60 nm. The optimum series and shunt resistance for Sb 2 S 3 and Sb 2 Se 3 based solar cell device is coming in the range of 3–5 Ω-cm 2 and 300 - 450 Ω-cm 2 respectively. It is also found that metal having work function 5eV or more is better to be used as an electrode in Sb 2 S 3 or Sb 2 Se 3 based solar cell. A maximum efficiency of 9.51% and 12.62% is achieved after optimizing different parameters for the Sb 2 S 3 and Sb 2 Se 3 solar cells respectively. • Sb 2 S 3 and Sb 2 Se 3 hetero-junction solar cells are simulated by the SCAPS software. • Solar cell structure was Mo/(Sb 2 S 3 or Sb 2 Se 3 )/CdS/i-ZnO/ZnO:Al/metal contact. • 9.51% and 12.62% efficiency was obtained for Sb 2 S 3 and Sb 2 Se 3 solar cell. • Reason for low photovoltaic efficiency was also analyzed.