Numerical modelling analysis of (FA)0.85Cs0.15Pb(I0.85 Br0.15)3: (FAPI)-based perovskite solar cell with different ETMs using solar capacitance simulator

Abstract

Perovskite solar cells (PSCs) are becoming the backbone of global photovoltaic (PV) industry due to their low cost manufacturing and long-lasting stability. Organic and inorganic Perovskite materials have unique electronic and optical features like high absorption coefficient, adjustable band gap and solution-based production method. In this study, numerical investigations have been performed to design and propose guidelines for novel solar cell configurations using SCAPS-1D simulator. A perovskite material (FA)0.85Cs0.15Pb(I0.85 Br 0.15)3 has been chosen as active absorber because of its easy experimental synthesis and durability alongside Copper oxide (CuO) hole transport material (HTM). The device performance was optimized for various electron transport materials (ETMs) like TiO2, IGZO, WO3 and SnO2. A comparative study has been performed to investigate the most efficient device configuration. Necessary investigations which have considerable influences on the optimized device performance and power conversion efficiency (PCE) have been carried out which include the diffusion length, band gaps, interface defect densities, thicknesses of different structural layers and temperature. In the proposed Au/CuO/ FA0.85Cs0.15 Pb (I0.85Br0.15)3 /ETMs/FTO solar cell configurations, the comparative role of ETMs has been examined in which TiO2 and SnO2 have shown remarkable results due to their high electron affinity and tunable band gaps. As per standard device optimization process in the simulation software, the thickness of the perovskite absorber layer was found to be 0.40 μm, optimized thickness values of ETMs TiO2, IGZO, WO3 and SnO2, were found to be 0.065, 0.060, 0.070 and 0.070 μm respectively along with CuO-HTM layer of optimized thickness value of 1.035 μm. Critical investigations regarding the variation of electrical parameters open-circuit voltage (Voc), Short circuit current (Jsc), Fill Factor (FF%) and quantum efficiency (QE) against thickness, temperature, interface defect density, carrier mobility, density of states, carrier generation and recombination’s have been performed and reported for all Au/CuO/ FA0.85Cs0.15 Pb (I0.85Br0.15)3 /ETMs/FTO compositions. Current investigations may certainly prove to be useful for designing and fabrication of highly efficient and cheap PSCs.