Abstract
The paper studies the effective mass and statistics of two-dimensional electrons in the InAs / AlSb heterostructure in the quantum well approximation of finite depth, and takes into account the nonparabolicity of the conduction band in the two-band Kane model. Moreover, the author proposes an approximate method for calculating the dispersion and the effective mass of an electron at the Fermi level for a two-dimensional electron gas depending on the total concentration and width of the quantum well. Numerical results were obtained for QWs based on the InAs / AlSb heterojunction. Some characteristics of the two-dimensional electron gas are calculated with the help of this dispersion. A simplified approximation of the dispersion is proposed. Based of the derived approximation, simpler formulas were obtained for the effective electron mass at the Fermi level and the equation for the concentration. For QWs (based on InAs / AlSb) with a width L> 50 nm, the approximate formulas are completely satisfactory. This statement is supported by the graphs, where the approximations obtained are compared with more accurate results and experimental data. This approximation makes it possible to study the kinetic, optical, and magnetic properties of two-dimensional electron gas.
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