Numerical Modeling of the Anomalous Low-Temperature Dependence of the Tunneling Conductance of a "Dirty" N-I-N Junction

Abstract

A numerical study of the low-temperature tunneling conductance G(T) of the “dirty” (low concentrations of the same non-magnetic impurities in the I layer) N-I-N junction (N is a normal metal; I is an insulator) with random quantum jumpers penetrating the disordered I-layer is performed. In a wide range of low impurity concentrations, the dependence G(T) anomalously, both qualitatively and quantitatively, differs from the corresponding dependence G0(T) in the “pure” (without impurities in the I layer) N-I-N junction. The numerical analysis of the dependence G(T) shows the possibility of the experimental manifestation of these anomalies.