Abstract
A numerical simulation was carried out on SiC–CVD in a horizontal hot-wall reactor. In order to explain the effect of surface polarity, Si-face and C-face, the surface reaction model was improved. Then, the growth processes and doping features of both Si-face and C-face were analyzed. The role of conditions at growing surface, such as surface mass flux of both Si-containing and C-containing species, surface concentration of Si-containing and C-containing species and their ratio, is investigated. Then, the deposition and etching rates, and doping concentration are analyzed as the function of those parameters. In addition, surface morphology of growing epitaxial layer is also investigated in connection with growing surface condition.
Highlights
IntroductionEach report states that the result depends on the experimental condition and reactor design
There are lots of experimental reports on SiC–CVD [1,2,3,4,5,6]
The discussion of inlet conditions such as source gas C/Si ratio, and not the conditions at the surface where the deposition occurs is leading to the confusion
Summary
Each report states that the result depends on the experimental condition and reactor design. There are several reports on numerical simulations that attempt to explain the mechanism of SiC–CVD [2,3,4,5,6], there are problems remaining to be solved, such as doping incorporation. A surface reaction model [8] is improved to explain the effect of surface polarity, Si-face and Cface. Using this model, a numerical simulation was carried out on SiC–CVD in a horizontal hot-wall reactor. The roles of growth surface conditions, especially the mass flux of Si- and C-containing species to the growing surface and its concentration in the gas phase, are discussed
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