Numerical modeling of MOS transistor using implicit finite different-time domain method

Abstract

In this work, we present a numerical modeling for a MOS transistor device. This motivated the present comprehensive study of its operations by accurate 2-D numerical simulations. All simulations codes are implemented using MATLAB code simulator. The numerical model is based on a finite-difference approximation of drift-diffusion model (DDM), which contains the Poisson equation and the carrier transport equations. The proposed algorithm provides the time and space distribution of the unknown functions electrostatic potential, carriers' concentration, current density for the MOS transistor. Finally, the obtained results are presented and show a good agreement with numerical simulations using finite element software (ISE-TCAD software).