Numerical modeling of InGaN/GaN p-i-n solar cells under temperature and hydrostatic pressure effects

Bilel Chouchen,Mohamed Hichem Gazzah,Abdullah Bajahzar,Hafedh Belmabrouk

doi:10.1063/1.5092236

Bilel Chouchen, Mohamed Hichem Gazzah + Show 2 more

Open Access

https://doi.org/10.1063/1.5092236

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Journal: AIP Advances	Publication Date: Apr 1, 2019
Citations: 13	License type: cc-by

Affiliation: University of Monastir, Majmaah University

Abstract

The present paper deals with the modeling of the simultaneous impact of temperature and applied hydrostatic pressure on the electronic characteristics and electrical parameters in In0.2Ga0.8N/GaN p-i-n solar cells. The energy conduction band is calculated with a self-consistent model coupled with the photovoltaic parameters taking into consideration the spontaneous and piezoelectric polarizations. A new efficient numerical model based on the difference finite method is well suited to theoretical and experimental data. The results reveal that the hydrostatic pressure has a beneficial effect on the behavior of cells on the N-face configuration, whereas the elevated temperature has a destructive impact on these devices.

Highlights

The III-nitride and their alloys based on heterostructures can be applied to many semiconductor devices, such as light-emitting diodes, solar cells, and the field-effect transistors
Asghari et al 20118 examined the effect of temperature on different electrical parameters of the solar cell p-i-n InGaN-based and chose a temperature range of 70 to 350 K
Cai et al 20119 investigated the characteristics InGaN p-i-n solar cells, where the chosen light concentration was varied 0.28 to 4.35 sun (AM0) and the temperature varied within a range of 25–340 ○C. The majority of these studies focused on the rising temperature, and the increasing short-circuit current density. They highlighted the decrease of the open-circuit voltage, and fill factor leading to a reduction in the conversion efficiency

Summary

INTRODUCTION

The III-nitride and their alloys based on heterostructures can be applied to many semiconductor devices, such as light-emitting diodes, solar cells, and the field-effect transistors. Other researches were interested in the influence of pressure on the electronic and optical properties of InGaN/GaN.14–16 This effect is one of the best tools for enhancing the physical specifications of these heterostructures.. Theoretical investigation of the pressure’s dependences on the optical properties in InGaN/GaN QW is studied by El Ghazi et al.19 They used the finite-difference method to solve the equations of the quasi-two-dimensional effective potential model. We carried a new numerical modeling of InGaN/GaN p-i-n solar cells under temperature and hydrostatic pressure effects. The temperature and pressure coefficients involved in Eq 26 are given in Table I for GaN and InN

Electrical characteristics

Numerical method

Description of the structure

RESULTS AND DISCUSSION

CONCLUSION