Abstract
The ground state of an exciton in the GaAs-based double quantum well structure in an external electric field is calculated by the direct numerical solution of the three-dimensional Schrödinger equation. A formation of the indirect exciton is demonstrated by the study of the localization of the exciton wave function in the double quantum well structure for different electric field strengths. A relatively slow radiative decay rate of the indirect exciton is observed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
