Abstract
AbstractA mixed‐potential, spatial‐domain integral equation approach is used to model the coupling and junction effects when microstrip structures in two different layers of a common substrate are crossing each other. A Galerkin method, together with the so‐called pseudo‐mesh current distribution for the basis functions, is then applied to accurately characterize multiport junctions. As an example, a four‐port crossover of two microstrip transmission lines is characterized in terms of the S‐parameters. © 1992 John Wiley & Sons, Inc.
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