Abstract
CdZnS/ CdZnTe photovoltaic solar cell is proposed in this research work. Solar cell performance is described on the basis of numerical analysis. Heterojunction photovoltaic solar cell performance is simulated and analyzed using simulation software called SCAPS (Solar Cell Capacitance Simulator). The cell structure is based on CdZnTe ternary compound semiconductor as the absorber layer and n- doped Cadmium Zinc Sulphide (CdZnS) as the buffer layer. Analysis is performed on the parameters such as the thickness of the CdZnTe absorber layer and its carrier density, working temperature, CdZnS buffer layer thickness and its carrier density to analyze their effects on the cell performance. The simulations show that the optimized thickness for the absorbing layer and the buffer layer should be from 0.1µm to 5 µm and 0.01µm to 0.1µm, respectively. The optimal photovoltaic properties have been achieved with an conversion efficiency of 25.74% with Fill Factor (FF) =89.03%, short circuit density (J sc ) = 26.348 mA/cm2 and Open circuit voltage (Voc) = 1.0973 V when the thickness and carrier density of the CdZnTe is 0.7-µm and1 × 1015cm-3, carrier density and the thickness of the CdZnS is 1 ×1017cm-3 and 0.05µm respectively. The above results will give some important guide for feasibly of fabricating higher efficiency CdZnTe solar cells.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
