Abstract

In this study, a device simulation of CaZrS3 material is reported for the first time, which makes this new study interesting, using the one-dimensional solarcell capacitance simulator Scaps-1D. Therefore, we tried to propose low-cost Electron Transport Materials ETMs (TiO2, ZnO, and SnO2). The effect of thickness, doping concentration, working temperature, defect density, and back contact (C, Au, Ni, and Pt) on the device performance was studied. In order to enhance the cell Power Conversion Efficiency (PCE), optimization of the device design key parameters is performed. As a result, we have found that for Pt/CuO/CaZrS3/SnO2/FTO, Pt/CuO/CaZrS3/TiO2/FTO, and Pt/CuO/CaZrS3/ZnO/FTO the PCE parameters are 34.56%, 34.52%, and 33.5% respectively. We anticipate that our theoretical results will motivate photovoltaic researchers to experimentally actualize these materials and their SCs.

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