Abstract

Cu2FeSnS4(CFTS) is auspicious nontoxic and earth abundant semiconductor compound having kesterite symmetrical structure. It is an attractive and suitable material for the fabrication of low cost, high efficiency and sustainable thin film photovoltaic cell. CFTS based kesterite photovoltaic cell device modeling was performed in this work. The influence of device parameters such as the thickness, acceptor and donor carrier concentration densities of absorber and electron transport layer (ETL), effect of back contact metal work function and the temperature effect on the performance of CFTS based kesterite photovoltaic cell is analyzed by using one dimensional solar cell capacitance simulator (SCAPS) software. In this work, promising optimized results had been achieved with the conversion efficiency of 19.97%, fill factor (FF) 85.94%, short-circuit current (Jsc) 23.37 mA/cm 2 and open circuit voltage (Voc) 0.995 V. The above results will give imperative baselines and feasible directions for the fabrication of higher efficiency CFTS based photovoltaic cell.

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