Abstract
AbstractDepth knowledge regarding device internal physics is very essential, and its application aids to develop innovative methods for device performance enhancement. Taking this point into cognizance, the present article introduced a novel triple hole block layer (HBL) organic light‐emitting diode (OLED) architecture and its analytical modeling based on Poisson's equation and drift diffusion equation. Compared with multilayered OLED and double HBL structure, the novel device depicted improvement of luminescence performance by 47% and 30% correspondingly, at a driving voltage of 18 V. Analytical analysis is undertaken to extract internal device parameters such as electron and hole concentration, their mobility, and current density. Analysis results revealed the reason for improved performance is higher electron concentration (2.53 * 1018), 5% increase over multilayered OLED. Additionally, it is observed that mismatch in electron and hole concentration is small in novel triple HBL OLED and compared with multilayered OLED, the mismatch is lower by 63%. Therefore, objective to achieve a balanced electron and hole concentration is achieved by utilization of triple HBL OLED without increasing the overall device dimension.
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