Abstract
GaN-based light-emitting diodes (LEDs) became one of the most widely used light sources. One of their key factors is power conversion efficiency; hence, a lot of effort is placed on research to improve this parameter, either experimentally or numerically. Standard approaches involve device-oriented or system-oriented methods. Combining them is possible only with the aid of compact, lumped parameter models. In the paper, we present a new electro-thermal model that covers all the complex opto-electro-thermal phenomena occurring within the operating LED. It is a simple and low computational cost solution that can be integrated with package- or system-oriented numerical analysis. It allows a parametric analysis of the diode structure and properties under steady-state operating conditions. Its usefulness has been proved by conducting simulations of a sample lateral GaN/InGaN LED with the aid of ANSYS software. The results presented illustrate the current density and temperature fields. They allow the identification of ‘hot spots’ resulting from the current crowding effect and can be used to optimise the structure.
Highlights
GaN-based light-emitting diodes (LEDs) are recognised as attractive solid-state lighting (SSL) sources due to their advantages compared to traditional light sources, such as lower electric power consumption, higher reliability, very long lifespan, and high colour rendering index
SSL LEDs belong to electronic power devices, which means that the conversion efficiency of the delivered electric power into the output optical power is the basic factor for their design
The LED solid-state lighting sources belong to the power electronic devices that operate at maximum currents, and the conversion efficiency of electrical power into optical power is one of the basic factors of their performance
Summary
GaN-based light-emitting diodes (LEDs) are recognised as attractive solid-state lighting (SSL) sources due to their advantages compared to traditional light sources, such as lower electric power consumption, higher reliability, very long lifespan, and high colour rendering index. The increase in local current density is accompanied by an increase in local Joule heat dissipation, which forces the maximum current reduction to keep the temperature inside the diode at a safe level Since both the power LED operating conditions and its reliability are very sensitive to the current distribution, a lot of effort has been devoted both to its evaluation and to its optimisation at the stage of the device design. A new simple electrothermal model allowing investigations of current and heat transfer in the presence of thermal and optical energy exchange phenomena taking place in the structure of lateral GaN/InGaN LEDs is presented. It can be integrated with fluid-thermal system-oriented simulations. The work-out diode model was used in numerical investigations aimed at power management of the selected LED diode
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