Abstract
A numerical model of a proposed InAs/InAs0.88Sb0.12 double heterostructure lightemitting diode (DH-LED) has been developed for its d.c. and transient characterization in the 3 to 5 μm wavelength region. The dependence of the optical power and bandwidth on interfacial recombination and self-absorption have been studied. The active layer width has been optimized against interfacial recombination and self-absorption for maximum optical power, bandwidth and power-bandwidth products. The dependence of the power-bandwidth product of the DH-LED on the drive current for different active layer doping concentrations has also been studied. The electrical confinement in the proposed heterostructure has been estimated and its variation with the active layer thickness has been studied. The rise time of the proposed LED has been calculated by using the results of the transient analysis. On the basis of the proposed model, the device is expected to find useful applications as an optical source in future generations of fibre-optic communication systems in the 3 to 5 μm wavelength region.
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