Abstract
We show comparison of four different numerical methods for simulating Photonic-Crystal (PC) VCSELs. We present the theoretical basis behind each method and analyze the differences by studying a benchmark VCSEL structure, where the PC structure penetrates all VCSEL layers, the entire top-mirror DBR, a fraction of the top-mirror DBR or just the VCSEL cavity. The different models are evaluated by comparing the predicted resonance wavelengths and threshold gains for different hole diameters and pitches of the PC. The agreement between the models is relatively good, except for one model, which corresponds to the effective index method. The simulation results elucidate the strength and weaknesses of the analyzed methods; and outline the limits of applicability of the different models.
Highlights
In the recent years the development of Photonic-Crystal-based Vertical-Cavity SurfaceEmitting Lasers (PC-VCSELs) is getting more and more advanced
We present the theoretical basis behind each method and analyze the differences by studying a benchmark VCSEL structure, where the PC structure penetrates all VCSEL layers, the entire top-mirror Distributed Bragg Reflectors (DBRs), a fraction of the top-mirror DBR or just the VCSEL cavity
In the analysis four variants are considered: (i) the holes are etched through the whole laser structure, (ii) the holes are present in the cavity only, while DBRs are uniform, (iii) the holes are etched in the whole top DBR, and (iv) only 10 pairs of the top DBR are etched
Summary
In the recent years the development of Photonic-Crystal-based Vertical-Cavity SurfaceEmitting Lasers (PC-VCSELs) is getting more and more advanced. These devices have strong potential for leaving laboratories into the market due to their unique properties, which make them a perfect choice for many applications. These properties include a stable single-mode operation [1, 2, 3], high-speed modulation [4, 5, 6] and polarization control [7, 8]. There are other possibilities like drilling the whole structure or placing the holes solely in the cavity, which can improve some properties of PC-VCSEL but constitutes a technological challenge
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