Abstract
The serious current crowing appears at the edge of the quasivertical GaN‐based PIN diode on sapphire substrate. Herein, to alleviate the current crowing and reduce Auger recombination for PIN diode, the ITO used widely in optoelectronic devices is proposed to be inserted on the edge of mesa of PIN diode. Then a reversed ITO‐pGaN junction is formed under forward voltage and deplete the carrier at the edge of mesa leading to alleviated current crowing and reduced Auger recombination. Moreover, the proposed PIN diode can improve the forward work voltage, without affecting the breakdown voltage for PIN diodes.
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