Abstract
In this paper, we study thermal buoyancy, the electromagnetic force and forced convection in a conventional radio frequency (RF) furnace for growing large-sized (4-inch) silicon carbide ingots using the top-seeded solution method. The thermal buoyancy and electromagnetic force are analyzed qualitatively and quantitatively under real working conditions, and a method to increase the growth stability of large-sized (4-inch) SiC is proposed through the study of forced convection.
Highlights
With the rapid development of wide bandgap semiconductor industry, silicon carbide has become a kind of strategic advanced electronic material [1,2]
The physical vapor transport (PVT) method has been adopted in the industry due to its fast growth and low cost, during the past ten years, increasing attention has been paid to the top-seeded solution growth (TSSG) method because it is closer to the thermodynamic growth equilibrium and produces low defect crystals [4,5]
20 rpm to 250 rpm) on the crystal growth rate of SiC, and the results suggested that a high-speed seed crystal rotation may drastically improve the growth rate
Summary
With the rapid development of wide bandgap semiconductor industry, silicon carbide has become a kind of strategic advanced electronic material [1,2]. Common silicon carbide production technologies include the physical vapor transport (PVT) method and the top-seeded solution growth (TSSG). On the premise of neglecting the effect of the solute on fluid flow, Mercier and Dedulle established a TSSG growth model containing only electromagnetic convection, forced convection, Marangoni convection, and buoyancy convection and studied the relationship between the crucible shape and flow field [6]. Marangoni convection was studied by Yamamoto [11], and the results show that the Marangoni force changed the direction of the fluid flow and had adverse effects on the growth. Crystals 2019, 9, 516 studied by Yamamoto [11], and the results show that the Marangoni force changed the direction of the fluid flow and had adverse effects on the growth.
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