Abstract
We design the high confinement InP/In1−xGaxAsyP1−y semiconductor waveguides and investigate the effective wavelength conversion based on this platform. Efficient confinement and mode field area fluctuation at different wavelength is analyzed to achieve the high nonlinear coefficient. The numerical results show that nearly zero phase-mismatch condition can be satisfied through dispersion tailoring of InP/In1−xGaxAsyP1−y waveguides, and the wavelength conversion ranging over 40 nm with the maximum conversion efficiency −26.3 dB is achieved. Meanwhile, the influences of the doping parameter y and pumping wavelength on the bandwidth and conversion efficiency are also discussed and optimized. Our demonstration of the excellent all-optical wavelength conversion properties of the InP/In1−xGaxAsyP1−y waveguides could pave the way towards direct integration telecom band devices on stand semiconductor platforms.
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