Abstract
Numerical simulation is used as a comprehensive tool for analysis and optimization of the multi-crystalline silicon (mc-Si) growth by the Directional Solidification (DS) method. We have used a transient global heat transfer model to optimize the temperature profile of the DS process to produce high-quality multi-crystalline silicon ingots for solar cell application. The melt-crystal interface shape, impurities and von Mises stress were studied by the numerical simulation with different temperature profiles. A slightly convex interface shape, lower thermal stress and lower impurities in the mc-Si were obtained due to the lower temperature gradient by the optimized temperature profile. Simulation results show that the optimized temperature profile is particularly suitable for high quality mc-Si ingot.
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