Numerical Investigation into Optoelectronic Performance of InGaN Blue Laser in Polar, Non-Polar and Semipolar Crystal Orientation

Sourav Roy,Priyo Nath Roy,Md Masud Rana,Md Rafiqul Islam,Ibrahim Mustafa Mehedi,Ashraful Hossain Howlader,Sharadindu Gopal Kiratnia,Md Shohanur Rahman,Md Mahmudul Hasan,Md Biplob Hossain,Lway Faisal Abdulrazak,Md Shofiqul Islam

doi:10.3390/cryst10111033

Abstract

Recently, InGaN grown on semipolar and non-polar orientation has caused special attraction due to reduction in the built-in polarization field and increased confinement of high energy states compared to traditional polar c-plane orientation. However, any widespread-accepted report on output power and frequency response of the InGaN blue laser in non-c-plane orientation is readily unavailable. This work strives to address an exhaustive numerical investigation into the optoelectronic performance and frequency response of In0.17Ga0.83N/GaN quantum well laser in polar (0001), non-polar (101¯0) and semipolar (101¯2), (112¯2) and (101¯1) orientations by working out a 6 × 6 k.p Hamiltonian at the Γ-point using the tensor rotation technique. It is noticed that there is a considerable dependency of the piezoelectric field, energy band gap, peak optical gain, differential gain and output power on the modification in crystal orientation. Topmost optical gain of 4367 cm−1 is evaluated in the semipolar (112¯2)-oriented laser system at an emission wavelength of 448 nm when the injection carrier density is 3.7 × 1018 cm−3. Highest lasing power and lowest threshold current are reported to be 4.08 mW and 1.45 mA in semipolar (112¯2) crystal orientation. A state-space model is formed in order to achieve the frequency response which indicates the highest magnitude (dB) response in semipolar (112¯2) crystal orientation.

Highlights

A III-N Wurtzite (WZ) ternary semiconductor alloy like InGaN has emerged as a remarkably A III-NWurtzite (WZ) ternary semiconductor likedueInGaN has emerged a remarkably attractive material for optoelectronic devices over thealloy last era to broad bandgap as span (0.7 Ev–3.4 attractive materialelectron for optoelectronic devices over the last era due to broad bandgapstability, span (0.7breakdown eV–3.4 eV), eV), magnificent mobility, thermal conductivity, chemical and thermal magnificent electrondrift mobility, thermal conductivity, chemical and thermalofstability, breakdown field and saturation velocity [1]
The results presented state-space representation of quantum well (QW) laser
The results presented here are obtained at 300K

Summary

Introduction

A III-N Wurtzite (WZ) ternary semiconductor alloy like InGaN has emerged as a remarkably A III-NWurtzite (WZ) ternary semiconductor likedueInGaN has emerged a remarkably attractive material for optoelectronic devices over thealloy last era to broad bandgap as span (0.7 Ev–3.4 attractive materialelectron for optoelectronic devices over the last era due to broad bandgapstability, span (0.7breakdown eV–3.4 eV), eV), magnificent mobility, thermal conductivity, chemical and thermal magnificent electrondrift mobility, thermal conductivity, chemical and thermalofstability, breakdown field and saturation velocity [1]. A III-N Wurtzite (WZ) ternary semiconductor alloy like InGaN has emerged as a remarkably A III-N. InxGa1-xN quantum field well and saturation drift region, velocityInGaN/GaN-based (In) composition of Indiodes quantum well (QW) (QW). In the active laser and light emitting (LEDs) can efficiently x Ga1−x N in thelight active region,green. InGaN/GaN-based laser range and light emitting diodes can laser efficiently emit emit between and violet spectrum [2]. For true-blue light emission, oscillating light between green and violet range [2].laser. For imaging true-blueconstructs light emission, laser oscillating a at a wavelength of 440~450 nmspectrum is required. Blue laser imaging constructs superb for the the detectionofand thorough of upper gastrointestinal lesions [3].images

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Conclusion