Abstract
A self-pulsing III-V/silicon laser is designed based on the Fano resonance between a bus-waveguide and a micro-ring resonator, partially covered by the graphene as a nonlinear saturable absorption component. The Fano reflector etched on the straight waveguide is used as one of the cavity mirrors in the coupling region to work with the graphene induced loss and nonlinearity to achieve pulsed lasing in GHz repetition frequency. The detailed lasing characteristics are studied numerically by using the rate equation and finite-difference time-domain (FDTD) simulations. The results show that the CMOS compatible hybrid laser can generate picosecond pulses with repetition rate at 1~3.12 GHz, which increases linearly with the injection current.
Highlights
Along with the rapid development of chip-integrated light detection/ranging (LiDAR) [1,2], neuromorphic computation [3], and microwave photonics [4,5] in various scientific and industrial applications, the pulsed semiconductor lasers are the main focus to enable device miniaturization, low power consumption, and cost reduction
The semiconductor mode-locked laser diodes have been demonstrated on the III-V-on-silicon platform [9,14,15,16] to generate high-repetition-rate pulse-train signals in narrow linewidth and low phase-noise without external modulations [17]
We investigate the electrically-pumped self-pulsing laser diode based on the heterogeneous III-V/Si platform, using the micro-ring partially covered by graphene as the saturable absorption (SA) region, and the Fano resonance effect between the micro-ring and the bus-waveguide to enable self-sustainable pulsing at high repetition rate with low absorption loss
Summary
Along with the rapid development of chip-integrated light detection/ranging (LiDAR) [1,2], neuromorphic computation [3], and microwave photonics [4,5] in various scientific and industrial applications, the pulsed semiconductor lasers are the main focus to enable device miniaturization, low power consumption, and cost reduction. We investigate the electrically-pumped self-pulsing laser diode based on the heterogeneous III-V/Si platform, using the micro-ring partially covered by graphene as the SA region, and the Fano resonance effect between the micro-ring and the bus-waveguide to enable self-sustainable pulsing at high repetition rate with low absorption loss. 2. Device Structure and Design Optimization The device structure is schematically shown, where the Fano-mirror on the right-hand side is composed of reflection holes (RH) in the bus waveguide and a micro-ring covered by the graphene layer, to select appropriate resonance wavelength for the gigahertz repetition-rate output pulses. In order to improve the self-pulsed hybrid silicon laser performance, we can optimize the passive and active regions, correspondingly, which include the Fano mirror, Bragg mirror, tapered coupling region, and multiple quantum wells (MQW), as follows
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
