Abstract
Silicon wafer as a brittle material is extensively used in semiconductors. The surface quality of this material significantly affects the quality and efficiency of related components. In this study, the coupled algorithm of SPH/FEM is used to simulate the surface polishing of silicon wafers with Magnetic Abrasive Finishing process. The effects of rotational speed and machining gap on percent change in surface roughness (%∆Ra) and material removal (MR) are comprehensively analyzed with simulations and experiments. Furthermore, the material removal mechanism in wafers was investigated by using AFM. Our observations showed that both micro-fracture and micro-cutting mechanisms might happen and it highly depends on polishing parameters. Results of the simulations and experimental data showed that MR and %∆Ra value increase with increasing rotational speed and decreasing machining gap. According to our experimental findings, maximum %∆Ra and MR are 65% and 39.09 mg, respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
