Abstract
We examine the influence of doping profile optimization on the trade-off relationship between modulation bandwidth and optical loss in an InP-organic hybrid (IOH) optical modulator, comparing it with a Si-organic hybrid (SOH) optical modulator. By incorporating the RF transmission line model, which enables a more precise modulation bandwidth analysis than the RC constant model, we demonstrate that the IOH modulator can achieve a modulation bandwidth of over 500 GHz with a 2 dB loss, capitalizing on the higher electron mobility of InP. In contrast, the SOH modulator cannot attain a 200 GHz modulation bandwidth with acceptable optical loss. Furthermore, we explore the potential for further enhancing the modulation bandwidth of the IOH modulator by shortening its length, making the IOH modulator a promising candidate for future ultra-high-speed optical modulation.
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