Abstract
An enhanced computer program has been applied to explain in detail the photon recycling effect which drastically limits the influence of radiative recombination on the performance of p-on-n HgCdTe heterostructure photodiodes. The computer program is based on a solution of the carrier transport equations, as well as the photon transport equations for semiconductor heterostructures. We distinguish photons in two energy ranges according to p+ and n region with unequal band gaps. As a result, both the distribution of thermal carrier generation and recombination rates and spatial photon density distribution in photodiode structures have been obtained. The general conclusion, similar to our earlier work concerning 3-μm n-on-p HgCdTe heterostructure photodiodes, confirms the previous assertion by Humphreys that radiative recombination does not limit HgCdTe photodiode performance.
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