Abstract
Numerical MOSFET modeling based on multidimensional Bernstein interpolation is presented as a means to improve simulation efficiency. Device operating-point information is extracted from prestored table values using functional reconstruction during transient simulation. The formulation of the numerical model conforms to the requirements of electronic circuit simulators which use the Newtonian-Raphson algorithm to solve the algebraic differential circuit equations. This Bernstein approximation technique is extended to multidimension variation diminishing interpolation and applied to DC current and intrinsic charge modeling of MOSFETs. The implementation of the numerical model is described, and experimental results based on the simulation of benchmark circuits are provided. >
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