Abstract
To validate the condition for applying thermionic emission (TE) theory when depletion-layer width is larger than carrier mean free path, Schottky barrier height qΦB of reported nickel/n-type gallium-nitride diodes was numerically determined. The forward-current/voltage characteristics of diodes on free-standing substrates were precisely reproduced by qΦB of 0.98 eV. Although this qΦB is consistent with the reported value (0.99 eV) determined from capacitance-voltage measurement, it is 0.05 eV higher than the reported value (0.93 eV) determined from TE theory. This discrepancy indicates that qΦB of GaN Schottky barrier diodes needs to be determined not by analytically but by numerically fitting the experimental data.
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