Abstract
Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13 cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95 mA · c m − 2 , V OC = 0.973 V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.
Highlights
The photovoltaic industry is over 95% focused on the use of silicon as a base material [1]
In order to validate our solar cell model, we start from a comparative study of the J-V characteristic of the results of the experiment and simulation, and on the other hand, we study the influence of the various parameters on the performance of the solar cell, using SCAPS-1D software
back reflector layer (BRL) of the experimental model were taken into account, assuming a reflection of the order of 95% at the rear contact of the amorphous silicon (a-Si):H-based solar cell and the absorption coefficient given by equation (6) for the i-layer of the solar cell
Summary
The photovoltaic industry is over 95% focused on the use of silicon as a base material [1]. It has a high concentration of dangling bonds in its structure To overcome this failure, it is necessary to incorporate hydrogen [4]. Some limits should be placed on the preeminence of a-Si:H-based solar cells, since a degradation effect caused by exposure to light was highlighted by the Staebler-Wronski effect [12]. They observed that exposure to the light of an aSi:H-based solar cell, stretched over time, caused a drop of its electrical parameters: this is known as a lightinduced degradation (LID) effect This limitation can be reduced by controlling the thickness of the intrinsic (i) layer in the structure of solar cell [13, 14].
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