Abstract
Numerical calculations by using a self-consistent model of the collisional sheath for the capacitively coupled RF discharge are our target. The results indicated that, at high pressure, the ohmic heating is usually the dominant heating mechanism in the discharge. The power dissipated in the sheath is calculated and compared with the measured data. Moreover, we indicated that, when the gas pressure is increased, the calculated dissipated power is decreased also while the measured input RF power is increased. Furthermore the sheath thickness of the capacitively coupled discharge is calculated and in the same order of the electron oscillation amplitude in the RF field, while the ionization mean free path is shorter than it.
Highlights
Coupled RF discharges were widely used in the microelectronics industry for the production of integrated circuits specially processes such as etching and coating [1]-[5]
The aim of the present work is using a self-consistent analysis of the collisional sheath of the capacitively coupled RF discharge to calculate the electron ohmic heating power, the average Stochastic power for a single sheath, the power dissipated in the sheath and the sheath thickness and compared the results with the available experimental data
The self-consistent model is used for high pressure capacitive RF discharge
Summary
Coupled RF discharges were widely used in the microelectronics industry for the production of integrated circuits specially processes such as etching and coating [1]-[5]. In these systems, the metallic electrodes were normally enclosed within the reactor and in direct contact with the plasma. When RF voltage is applied between two parallel plate electrodes, two sheaths are formed in front of each electrode and plasma connecting these sheaths These sheaths heat the electrons through a process in which electrons reflected from the moving sheath edge and gained energy on average. Averaging over an oscillation period, there is a net energy gain
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have