Abstract
The surface temperature of semiconductor tips irradiated by pulsed-laser are for the first time calculated. This calculation is based on a new idea because the idea used in the calculation of the temperature of metal tips cannot be applied to that of semiconductor tips. A new factor is introduced to roughly estimate the tip surface temperature rise. The radius of the tip apex is not an important factor in estimating the temperature of semiconductor tips irradiated by a pulsed laser. The maximum surface temperature of the semiconductor tip apex reached depends almost linearly on the incident energy density of the pulsed-laser beam. As the case may be, the apparent optical absorption coefficient is closely related to the angle of the cone of the tip and plays also an important role in the temperature rise of the semiconductor tip.
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