Abstract
A numerical calculation model for a single wafer wet etching rate using a swinging nozzle was developed on the basis of computational fluid dynamics and the rate theory. This model was validated using the etching rate of a silicon dioxide film by hydrogen fluoride aqueous solution, which was injected from a center and a non-center nozzle onto a rotating 200mm diameter silicon wafer surface. The injection nozzle at the non-center position was accounted as a cylindrically-shaped inlet. Calculation showed the maximum etching rate at the outside edge position of the swinging nozzle, consistent with the trend of measurement. Thus, the numerical calculation model developed in this study is expected to be practical for designing the wet etching conditions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
