Abstract
We report on the results of experimental investigation and numerical simulation of switching of SOS diode with p+P0n+ structure and with reduced thickness of P0-base. The proposed 1D diffusion-drift model of electron–hole plasma dynamics is found to be in good agreement with the experiment. The reduction of the P0-base thickness has allowed us to double the output pulse voltage with the same switching current density. This has been reached by a considerable reduction of switching losses as well as due to the formation of the domain of a strong quasi-rectangular electric field at the P0n+ junction during the current interruption. As a result, output pulse amplitude considerably exceeds the static breakdown voltage of P0n+ junction. This effect has been observed for the first time for high-voltage semiconductor opening switches.
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